Effects of Aluminium and Tungsten Co-Doping on the Optical Properties of VO2 Based Thin Films

Abstract

Aluminium and tungsten co-doped vanadium dioxide (VO₂:W:Al) thin films were deposited by DC reactive magnetron sputtering technique. In this work we report on the effects of aluminium and tungsten co–doping on the optical properties of vanadium dioxide (VO₂) based thin films with a view of combining both increased luminous transmittance (T_lum) and lowered transition temperature (τ_c). The effect of aluminium and tungsten co-doping on semiconductor-metal transition of vanadium dioxide films was investigated and compared with tungsten doped and undopedVO₂films. Spectral transmittances of the films were obtained using Shimadzu SolidSpec-3700 DUV UV-VIS-NIR spectrophotometer. The results revealed that the transmittance of tungsten and aluminium co–doped vanadium dioxide using two Al pellets showed a peak at about 54% in the visible spectral range with fairly good switching characteristics and a transition temperature of 61 ^oC.

Keywords: Transition temperature, luminous transmittance, tungsten-aluminium co-doping, vanadium dioxide